| PART |
Description |
Maker |
| STF28N60DM2 |
Extremely high dv/dt ruggedness
|
STMicroelectronics
|
| STP43N60DM2 |
Extremely high dv/dt ruggedness
|
STMicroelectronics
|
| STW70N60DM2 |
Extremely high dv/dt ruggedness
|
STMicroelectronics
|
| CMPTA44 |
NPN SILICON EXTREMELY HIGH VOLTAGE TRANSISTOR
|
CENTRAL[Central Semiconductor Corp]
|
| FDC6318P |
High performance trench technology for extremely low R
|
TY Semiconductor Co., Ltd
|
| FDG330P |
High performance trench technology for extremely low R
|
TY Semiconductor Co., L...
|
| CES2321 |
High dense cell design for extremely low RDS(ON).
|
TY Semiconductor Co., Ltd
|
| FDC6312P |
High performance trench technology for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| CES2305 |
High dense cell design for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| CES2308 |
High dense cell design for extremely low RDS(ON).
|
TY Semiconductor Co., Ltd
|
| EKL |
Aluminum Electrolytic Capacitors, Radial Style, Polarized AI Electrolytic Capacitor, Extremely Long Lifetime, High Temp Range (125°C), High AC Rating
|
Vishay
|
| AMS3400SRG |
Super high density cell design for extremely low RDS(ON)
|
Advanced Monolithic Systems Ltd
|
